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Improving insights in semiconductor package analysis

with ZEISS FE-SEM

The ZEISS GeminiSEM family offers failure analysis techniques that support the complexity of next-generation devices, along with resolution enhancements to align with these advancements.

  • Gemini technology provides best-in-class resolution across various materials
  • Enhanced detectors ensure high signal-to-noise ratio and resolution for low kV and material contrast
  • Spacious chamber with optimized ports supports compositional and phase analysis using EDS and EBSD
  • Includes ZEN software for automated imaging and routine analysis

Distortion free large field of view high pixel resolution imaging

With a high pixel resolution of up to 32K x 24K, this system enables imaging of fine details while preserving an overview and contextual information for the region of interest.

The Gemini optics deliver excellent low-voltage imaging without the need for immersion optics or stage bias, making it ideal for imaging non-conductive and beam-sensitive soft polymer materials in advanced packaging.

Enhanced detectors for unmatched material and phase contrast

Whether examining Through-Silicon Vias (TSV), Cu-Cu bonds, solder materials, Intermetallic Compound (IMC) layers, or wire bonds, the Gemini column with enhanced detectors delivers unparalleled imaging performance.

Exceptional material phase and channeling contrast provide valuable insights for failure analysis and process characterization, achieved routinely.

 

Unmatched stability and ease of use

ZEISS FE-SEMs are designed to keep your images in perfect focus while switching acceleration voltages, effortlessly maintaining focus even when adjusting settings. This uncut video demonstrates a seamless transition from 15 kV to 20 V, with a consistently sharp and focused image requiring no manual alignment or adjustment, aside from brightness and contrast.

This capability not only ensures consistent focus but also streamlines workflows, reducing cycle time and the effort needed to capture high-quality images, thus unlocking new levels of efficiency and productivity.

Beam sleeve and VP Mode for high-resolution imaging

The ZEISS GeminiSEM Family incorporates a beam sleeve and Variable Pressure (VP) imaging mode to enhance the resolution and analysis of non-conductive and soft materials without extensive sample preparation. Accurate EDS analysis on soft and non-conductive samples is achieved, as the beam sleeve shortens the beam path through the low-vacuum region, improving the signal-to-noise ratio for high-resolution imaging and Energy-Dispersive X-ray Spectroscopy (EDS) analysis, while further reducing charging effects and beam-induced damage.

Montage imaging and correlative workflow for automated ROI acquisition

Recipe-based automated image acquisition significantly enhances large-area imaging workflows by streamlining and automating the imaging process across multiple regions of interest (ROI) and samples.

This powerful feature removes the need for manual intervention, enabling efficient imaging over large areas. Furthermore, the ZEISS correlative workflow seamlessly integrates data from multiple modalities and tools, such as light microscopy and 2D X-ray, to guide targeted acquisition of specific ROIs.

By integrating data from various imaging techniques, this approach provides a comprehensive understanding of samples, leading to more accurate analyses and deeper insights.

Large chamber with ports, optimized geometry for EDS and immersion-free optics for EBSD

The large chamber is optimized with multiple ports for 180° EDS acquisition and EBSD analysis. Fast switching between low and high current modes in the Gemini column, along with immersion-free optics, ensures ease of use and artifact-free results for analytical work.

Download the free correlative workflow for nanoscale failure analysis eBook

Abstract

This whitepaper introduces a groundbreaking workflow for the imaging and analysis of semiconductor devices, addressing limitations in traditional sample preparation methods like mechanical lapping and broad ion beam (BIB) milling. As semiconductor designs grow more complex with multi-chip stacking and heterogeneous integration, traditional methods struggle to provide the cross-sectioning accuracy and undistorted surfaces required for high-resolution scanning electron microscopy (SEM). This paper presents a novel correlative workflow using non-destructive 3D X-ray microscopy (XRM) to generate submicron-accurate 3D maps, minimizing the risk of missing or damaging fault regions. Additionally, it showcases a proprietary micromachining process for creating deformation-free surfaces, enhancing precision and reliability in physical failure analysis (PFA).

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